dopant concentration中文是什么意思

• 杂物浓度

• "dopant"中文翻译    n. 【物理学】掺杂剂，掺杂物。
• "concentration"中文翻译    n. 1.集中。 2.【化学】提浓，蒸浓，浓缩；浓度；稠 ...
• "dopant" 中文翻译 :    n. 【物理学】掺杂剂，掺杂物。
• "acceptor dopant" 中文翻译 :    受主掺质
• "donor dopant" 中文翻译 :    施钟质
• "dopant activation" 中文翻译 :    掺杂剂活化
• "dopant atom" 中文翻译 :    掺杂剂原子
• "dopant chemistry" 中文翻译 :    掺杂化学
• "dopant density" 中文翻译 :    掺杂密度
• "dopant distribution" 中文翻译 :    掺杂剂分布
• "dopant donor" 中文翻译 :    施体渗染剂
• "dopant gas" 中文翻译 :    掺杂剂气体; 掺杂气
• "dopant gradient" 中文翻译 :    掺杂梯度
• "dopant host" 中文翻译 :    固体掺杂剂源
• "dopant material" 中文翻译 :    掺杂材料
• "dopant p" 中文翻译 :    型掺杂剂
• "dopant predeposition" 中文翻译 :    掺杂剂预淀积
• "dopant profile" 中文翻译 :    掺杂分布图
• "dopant redistribution" 中文翻译 :    掺杂再分布
• "dopant resist" 中文翻译 :    掺杂剂抗蚀剂
• "dopant source" 中文翻译 :    掺杂剂源
• "implanted dopant" 中文翻译 :    注入杂质
• "impurity dopant" 中文翻译 :    杂质
• "isolation dopant" 中文翻译 :    隔离区掺杂剂
• "liquid dopant" 中文翻译 :    液体掺杂剂

• The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0 . 6 at . % )
  除了改进冷却控温系统外，选择掺杂浓度较低的激光晶体，有利于高效散热，得到更稳定的激光输出。
• Testing of materials for semiconductor technology ; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
  半导体技术材料的试验.用电容-电压法和水银接点确定
• The laser damage threshold of the ybyp _ xv _ ( 1 - x ) o _ 4determined by nd : yag laser , which showed a decreasing tendency with the increase of the dopant concentration
  利用nd : yag激光器测试晶体的激光损伤阈值，随着掺杂离子浓度的增大，激光损伤光功率密度呈减小趋势。
• The upconverted emission after 980 nm excitation revealed an enhancement of the red [ 4f9 / 2 4i15 / 2 ] emission with respect to the green [ ( 2h11 / 2 , 4s3 / 2 ) 4i15 / 2 ] emission when the dopant concentration is increased
  在纳米晶和体材料中均观察到980nm激发下红色和绿色上转换发光，红光与绿光的相对强度比随着浓度的增大而增大。
• The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed , which was a possible alternative to achieve color display . 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated . when the balq3 dopant concentration was about 25 mol % , a high performance devcie with luminous efficiency of 1 . 0 lm / w , the peak of emission spectrum at 440 nm , the cie coordinate at ( 0 . 18 , 0 . 15 ) , and half lifetime of unencapsulated device about 950 hrs was achieved
  导致本现象的原因是由于各有机层电场强度的变化影响了空穴和电子的隧穿几率,从而导致载流子的复合区域发生改变而发出不同颜色的光; 3 )制备了结构为ito / npb / adn : balq3 / alq3 / mg : ag的蓝光oled ,空穴阻挡材料balq3的掺入显著影响了oled的光电性能,当balq3的掺杂浓度为25mol %时, oled的发光效率为1 . 0lm / w ,发光光谱的峰值为440nm ,色纯度为( 0 . 18 , 0 . 15 ) ,未封装器件的半衰期达到了950小时; 4 )在蓝光材料adn中掺杂npb 、 balq3和tbp三种材料时,不仅改善了器件的发光亮度和色纯度,而且提高了器件的发光效率和寿命。
• From then on , the above two shortcomings had been overcome . impurity concentration and junction depth can be accurately controlled and freely adjusted . both low and high dopant concentration can be gained easily , and ideal distribution of ga in si can also be achieved with uniform surface concentration , good repeatability and high eligibility and excellence ratio , which have greatly improved comprehensive performances of the devices
  此工艺发明以来，克服了上述两者的弊端，杂质浓度和结深能准确控制而又能任意调整，可进行低、高浓度阶段性掺杂，得到元素ga在si中的理想分布，而且表面浓度均匀一致、重复性好、合格率和优品率高，改善和提高了器件的综合性能。
• ( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed . theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented . and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields , a larger f can be achieved effectively than that obtained with no field applied
  由两块不同掺cr浓度的sbn 61 cr晶体得到的实验结果同时表明，适当的外电场作用能够有效提高晶体的二波耦合增益，并且，外电场的作用使晶体的响应速度大大提高，而晶体的最佳耦合角与外电场之间没有明显的依赖关系。
• The bandgap is found to broaden with increasing dopant concentration , and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength , with both cases being attributed to the burstein - moss shift . we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films . using sol - gel technique , highly c - axis oriented zno films with 5 mol . %
  为了研究zno : al薄膜在紫外光探测方面的性能,我们采用溶胶-凝胶旋涂法在si衬底上生长出具有高度c轴取向的zno : al薄膜,掺al浓度为5mol . % ,并以此作为有源区成功制备出了au / zno : al / au光电导型紫外探测器的原型器件,并对其i - v特性、紫外光响应和光致发光等方面的性能进行了研究。
• The oxide and reduce potential and the dopant concentration . the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2 , maybe that loading v2o5 would accelerate the electron captured and charge transferring , change the samp1e surface hydrophilic and absorption
  纳米tio _ 2 - v _ 2o _ 5复合光催化剂对次甲基蓝的降解实验表明，复合v _ 2o _ 5后tio _ 2可以加速电子捕获和电荷迁移速率，改变了样品表面吸附亲合力，使降解效率相比纯tio _ 2有很大提高。
• 1 、 through the theoretical analysis and the medici simulation , according to the design directive , the structural parameters are designed comprehensively , including the dopant concentration and the depth of the emitter , the base dopant concentration and the depth ( especially the ge ratio ) , the dopant concentration and the depth of the collector
  主要工作是: 1 、通过理论分析和medici模拟,综合设计得出符合设计指标的结构参数,主要包括:发射区的掺杂浓度和厚度?基区的掺杂浓度和厚度及基区中ge的组分比?集电区的掺杂浓度和厚度。